Nanochannel-confined growth of crystallographically orientated perovskite nanowire arrays for polarization-sensitive photodetector application
نویسندگان
چکیده
Highly ordered perovskite nanowire (PNW) arrays are important building blocks for potential application in integrated optoelectronic devices due to their unique properties. Herein, a recordable digital versatile disk-assisted nanochannel-confined growth (NCG) strategy was developed large-scale of different kinds PNW with preferentially crystallographic orientation on various substrates. Photodetector constructed from MAPbI3 NW exhibits prominent photoresponse properties responsivity 20.56 A W?1 and specific detectivity 4.73 × 1012 Jones, respectively. What is more, the photodetector can function as polarization-sensitive one-dimensional arrays, polarization ratio 2.2. The proposed NCG provides cost-efficient effective method fabrication high-quality applications future systems.
منابع مشابه
Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity.
We report the fabrication and optical response of boron-doped single silicon nanowire-based metal-semiconductor-metal photodetector. Typical single nanowire devices with diameter of ∼80-100 nm and electrode spacing of ∼1 μm were made using electron-beam lithography from nanowires, grown by a metal-assisted chemical etching process. A high responsivity, of the order of 10(4) A W(-1), was observe...
متن کاملAll-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application
1 Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing, China, Chongqing Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology, College of Mechanical and Electrical Engineering, Yangtze Normal University, Chongqing, China, 3 State Key Laboratory of High Fiel...
متن کاملShort-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays
One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; t...
متن کاملGaAs/AlGaAs nanowire photodetector.
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor Schottky contact promote photogenerated charge...
متن کاملPatterned growth of horizontal ZnO nanowire arrays.
We report an approach to fabricating patterned horizontal ZnO nanowire arrays with a high degree of control over their dimensionality, orientation, and uniformity. Our method combines electron beam lithography and a low temperature hydrothermal decomposition. This approach opens up possibilities to fabricate ZnO NW array based strain and force sensors, two-dimensional photonic crystals, integra...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Science China. Materials
سال: 2021
ISSN: ['2095-8226', '2199-4501']
DOI: https://doi.org/10.1007/s40843-021-1654-5